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Field Effect Transistors

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*4/27/2012

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Articles with Abstracts

Naphthalene Diimide-Based Polymer Semiconductors: Synthesis, Structure–Property Correlations, and n-Channel and Ambipolar Field-Effect Transistors
(1434–1442)
Chemistry of  Materials 24 #8 (2011)
Guo et al of the University of Kentucky and the University of Washington, syntrhesized a series of nine alternating donor–acceptor copolymer semiconductors based on naphthalene diimide (NDI) acceptor and seven different thiophene moieties with varied electron-donating strength and conformations.  They were characterized, and used in n-channel and ambipolar organic field-effect transistors (OFETs).  The NDI copolymers had moderate to high molecular weights, and most of them exhibited moderate crystallinity in thin films and fibers. The LUMO energy levels of the NDI copolymers, at −3.9 to −3.8 eV, were constant as the donor moiety was varied. However, the HOMO energy levels could be tuned over a wide range from −5.3 eV in P8 to −5.9 eV in P1 and P3. As semiconductors in n-channel OFETs with gold source/drain electrodes, the NDI copolymers exhibited good electron transport with maximum electron mobility of 0.07 cm2/(V s) in P5. Although head-to-head (HH) linkage induced backbone torsion, polymer P4 showed substantial electron mobility of 0.012 cm2/(V s) in bottom-gate/top-contact device geometry. Some of the copolymers with high-lying HOMO levels (P7 and P8) exhibited ambipolar charge transport in OFETs with high electron mobilities (0.006–0.02 cm2/(V s)) and significant hole mobilities (>10–3 cm2/(V s)). Varying the device geometry from top-contact to bottom-contact leads to the appearance or enhancement of hole transport in P4, P6, P7, and P8. Copolymers with smaller alkyl side chains on the imide group of NDI have enhanced carrier mobilities than those with bulkier alkyl side chains. These results show underlying structure–property relationships in NDI-based copolymer semiconductors while demonstrating their promise in n-channel and ambipolar transistors.  (RDC 4/27//2012)

Molecular Weight-Induced Structural Transition of Liquid-Crystalline Polymer Semiconductor for High-Stability Organic Transistor
( 4442–4447)
Advanced Functional Materials 21  #23 (2011)
Kim et al, South Korea and California, fabricated polymer field-effect transistors (PFETs) with high electrical stability under bias-stress, by minimizing the density of charge trapping sites caused by the disordered regions.  Here we report PFETs with excellent electrical stability comparable to that of single-crystalline organic semiconductors by specifically controlling the molecular weight (MW) of the donor-acceptor type copolymer semiconductors, poly (didodecylquaterthiophene-alt-didodecylbithiazole).  We found that MW-induced thermally structural transition from liquid-crystalline to semi-crystalline phases strongly affects the device performance (charge-carrier mobility and electrical bias-stability) as well as the nanostructures such as the molecular ordering and the morphological feature. This enhancement of the electrical bias-stability can be attributed to highly ordered liquid-crystalline nanostructure of copolymer semiconductors on dielectric surface via the optimization of molecular weights. (RDC 12/6/2011)

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Roger D. Corneliussen
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Copyright 2012 by Roger D. Corneliussen.
No part of this transmission is to be duplicated in any manner or forwarded by electronic mail without the express written permission of Roger D. Corneliussen
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* Date of latest addition; date of first entry is 12/6/2011.