Maro Publications

Phase Change Memories

Patents with Abstracts

*8/29/2012

Maro Topics

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Patents with Abstracts

8,242,034 
Phase change memory devices and methods for fabricating the same
 

Lin and Wang of Powerchip Technology Corporation, Taiwan, developed a phase change memory device based on a bottom electrode formed over a substrate.  A first dielectric layer is formed over the bottom electrode.  A heating electrode is formed in the first dielectric layer and partially protrudes over the first dielectric layer, wherein the heating electrode includes an intrinsic portion embedded within the first dielectric layer, a reduced portion stacked over the intrinsic portion, and an oxide spacer surrounding a sidewall of the reduced portion.  A phase change material layer is formed over the first dielectric layer and covers the heating electrode, the phase change material layer contacts a top surface of the reduced portion of the heating electrode. A top electrode is formed over the phase change material layer and contacts the phase change material layer. (RDC 8/29/2012)

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Interested!!
Bookmark this page to follow future developments!.
(RDC 6/5/2012)

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Roger D. Corneliussen
Editor
www.maropolymeronline.com

Maro Polymer Links
Tel: 610 363 9920
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E-Mail: cornelrd@bee.net  

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Copyright 2012 by Roger D. Corneliussen.
No part of this transmission is to be duplicated in any manner or forwarded by electronic mail without the express written permission of Roger D. Corneliussen
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** Date of latest addition; date of first entry is 8/29/2012.