Field Effect Transistors
Nanotechnology
from 3/25/2008

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US Patents

Warning:  Sometimes the older Patent links no longer work.  Go to the US Patent Patent number search page, copy the Patent number into the search box and search.

4/22/2008

7,361,545
Field effect transistor with buried gate pattern

7,361,536
Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor

4/15/2008

7,358,122
High performance FET devices and methods thereof

4/8/2008

7,355,223
Vertical junction field effect transistor having an epitaxial gate

7,355,215
Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies

7,355,214
Field effect transistor and fabrication thereof, semiconductor device and fabrication thereof, logic circuit including the semiconductor device, and semiconductor substrate

7,355,200
Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor

7,354,827
Transistor having asymmetric channel region, semiconductor device including the same, and method of fabricating semiconductor device including the same

7,354,816
Field effect transistor with gate spacer structure and low-resistance channel coupling

3/25/2008

7,348,642
Fin-type field effect transistor

7,348,254
Method of fabricating fin field-effect transistors

7,348,228
Deep buried channel junction field effect transistor (DBCJFET)

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Journal Articles

4/25/2008

Electrical characteristics of Si-nanoparticle/Si-nanowire-based field-effect transistors
(3424-3428) Journal of Materials Science 43 #10 (2008)

Gating of single molecule transistors: Combining field-effect and chemical control
(# 154706) Journal of Chemical Physics 128 #15 (2008)
Abstract

High Performance n-Type Field-Effect Transistors Based on Indenofluorenedione and Diindenopyrazinedione Derivatives
(2615 – 2617) Chemistry of  Materials 20 #8 (2008)
No abstract.

Fabrication and characteristics of ultrashort-channel carbon nanotube field-effect transistors
(# 152111) Applied Physics Letters 92 #15 (2008)
Abstract

Transport properties of organic field effect transistors modified by quantum dots
(# 153308) Applied Physics Letters 92 #15 (2008)
Abstract  

High-Performance Air-Stable Bipolar Field-Effect Transistors of Organic Single-Crystalline Ribbons with an Air-Gap Dielectric 
(p 1511-1515)
Advanced Materials 20 #8 (2008)
Abstract

4/18/2008

Influence of Redox Molecules on the Electronic Conductance of Single-Walled Carbon Nanotube Field-Effect Transistors: Application to Chemical and Biological Sensing
(3780 – 3787) Journal of the American  Chemical Society 13 #12 (2008)
Abstract 

High Mobility Single-Crystal Field-Effect Transistors from Bisindoloquinoline Semiconductors
(1118 – 1119) Journal of the American  Chemical Society 13 #4 (2008)
Abstract

Observation of field-effect in a cross-linked polyfluorene semiconductor
(189-191) Chemical Physics Letters 455  #4-6 (2008)

Increasing the noise margin in organic circuits using dual gate field-effect transistors
(# 143304) Applied Physics Letters 92 #14 (2008)
Abstract

Hysteresis-free organic field-effect transistors and inverters using photocrosslinkable poly(vinyl cinnamate) as a gate dielectric
(# 143306) Applied Physics Letters 92 #14 (2008)
Abstract

4/11/2008

High quality anatase TiO2 film: Field-effect transistor based on anatase TiO2
(# 132107) Applied Physics Letters 92 #13 (2008)
Abstract

Impact of the strained SiGe source/drain on hot carrier reliability for 45  nm p-type metal-oxide-semiconductor field-effect transistors
(# 133504) Applied Physics Letters 92 #13 (2008)
Abstract

III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge
(# 133513) Applied Physics Letters 92 #13 (2008)
Abstract  

High-Performance Organic Field-Effect Transistors with Low-Cost Copper Electrodes 
(p 1286-1290)
Advanced Materials 20 #7 (2008)
Abstract

4/4/2008

Novel small molecules for organic field-effect transistors: towards processability and high performance
(
827 – 838) Chemical Society Reviews 37  #4 (2008)
A tutorial review

Benzo[1,2-b:4,5-b]bis[b]benzothiophene as solution processible organic semiconductor for field-effect transistors
(
1548 – 1550) Chemical Communications #13 (2008)

Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors
(# 123506) Applied Physics Letters 92 #12 (2008)
Abstract

Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors
(# 123509) Applied Physics Letters 92 #12 (2008)
Abstract  

Fabrication of gate stack with high gate work function for implantless enhancement-mode GaAs n-channel metal-oxide-semiconductor field effect transistor applications
(# 123513) Applied Physics Letters 92 #12 (2008)
Abstract

Quantitative analysis of individual metal-CdSe-metal nanowire field-effect transistors
(# 112105) Applied Physics Letters 92 #11 (2008)
Abstract  

3/28/2008

Benzo[1,2-b:4,5-b]bis[b]benzothiophene as solution processible organic semiconductor for field-effect transistors
(
1548 – 1550) Chemical Communications #13 (2008)

Quantitative analysis of individual metal-CdSe-metal nanowire field-effect transistors
(# 112105) Applied Physics Letters 92 #11 (2008)
Abstract

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Roger D. Corneliussen
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